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Homogeneous broadening and k-vector conservation in direct bandgap transitions: Non-Lorentzian homogeneous line shapes for exponential decays under relaxation time approximation

Identifieur interne : 000B78 ( Main/Repository ); précédent : 000B77; suivant : 000B79

Homogeneous broadening and k-vector conservation in direct bandgap transitions: Non-Lorentzian homogeneous line shapes for exponential decays under relaxation time approximation

Auteurs : RBID : Pascal:13-0287300

Descripteurs français

Pascal (Inist)
- Bande interdite, Profil raie, Temps relaxation, Transition optique, Photoluminescence, Electroluminescence, Exciton, Continuum, Epitaxie jet moléculaire, Règle Urbach, Elargissement raie, Aluminium Gallium Arséniure Mixte, Gallium Indium Phosphure Mixte, Puits quantique contraint, Arséniure de gallium, Semiconducteur III-V.

English descriptors

KwdEn :
- Aluminium Gallium Arsenides Mixed, Continuum, Electroluminescence, Energy gap, Excitons, Gallium Indium Phosphides Mixed, Gallium arsenides, III-V semiconductors, Line broadening, Line shape, Molecular beam epitaxy, Optical transition, Photoluminescence, Relaxation time, Strained quantum well, Urbach rule.

Abstract

k-vector conservation is studied in direct bandgap optical transitions by examining edge emitted photoluminescent and electroluminescent spectra. Inhomogeneously and homogeneously broadened spectra are identified in tensile strained, single quantum well, broad stripe laser diode structures. In low excitation conditions, the molecular beam epitaxy (MBE) deposited test structures showed Urbach-tail like inhomogeneous broadening with small Urbach parameter values, typical for high quality materials. At high excitation conditions, significant deviations from Lorentzian line shape were observed and concluded to arise from k-vector conservation within the line broadening process.

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Le document en format XML

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<author><name sortKey="Viljanen, Juha" uniqKey="Viljanen J">Juha Viljanen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Consulting Photonics Scientist</s1>
<s2>Espoo, 02180</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>Consulting Photonics Scientist</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lehkonen, Sami" uniqKey="Lehkonen S">Sami Lehkonen</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Coherent Inc.</s1>
<s2>Santa Clara, CA 95054</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Coherent Inc.</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">13-0287300</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0287300 INIST</idno>
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<seriesStmt><idno type="ISSN">1434-6028</idno>
<title level="j" type="abbreviated">Eur. phys. j., B Cond. matter phys. : (Print)</title>
<title level="j" type="main">The European physical journal. B, Condensed matter physics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Gallium Arsenides Mixed</term>
<term>Continuum</term>
<term>Electroluminescence</term>
<term>Energy gap</term>
<term>Excitons</term>
<term>Gallium Indium Phosphides Mixed</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Line broadening</term>
<term>Line shape</term>
<term>Molecular beam epitaxy</term>
<term>Optical transition</term>
<term>Photoluminescence</term>
<term>Relaxation time</term>
<term>Strained quantum well</term>
<term>Urbach rule</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Bande interdite</term>
<term>Profil raie</term>
<term>Temps relaxation</term>
<term>Transition optique</term>
<term>Photoluminescence</term>
<term>Electroluminescence</term>
<term>Exciton</term>
<term>Continuum</term>
<term>Epitaxie jet moléculaire</term>
<term>Règle Urbach</term>
<term>Elargissement raie</term>
<term>Aluminium Gallium Arséniure Mixte</term>
<term>Gallium Indium Phosphure Mixte</term>
<term>Puits quantique contraint</term>
<term>Arséniure de gallium</term>
<term>Semiconducteur III-V</term>
</keywords>
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<front><div type="abstract" xml:lang="en">k-vector conservation is studied in direct bandgap optical transitions by examining edge emitted photoluminescent and electroluminescent spectra. Inhomogeneously and homogeneously broadened spectra are identified in tensile strained, single quantum well, broad stripe laser diode structures. In low excitation conditions, the molecular beam epitaxy (MBE) deposited test structures showed Urbach-tail like inhomogeneous broadening with small Urbach parameter values, typical for high quality materials. At high excitation conditions, significant deviations from Lorentzian line shape were observed and concluded to arise from k-vector conservation within the line broadening process.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1434-6028</s0>
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<fA03 i2="1"><s0>Eur. phys. j., B Cond. matter phys. : (Print)</s0>
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<fA06><s2>5</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Homogeneous broadening and k-vector conservation in direct bandgap transitions: Non-Lorentzian homogeneous line shapes for exponential decays under relaxation time approximation</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>VILJANEN (Juha)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LEHKONEN (Sami)</s1>
</fA11>
<fA14 i1="01"><s1>Consulting Photonics Scientist</s1>
<s2>Espoo, 02180</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Coherent Inc.</s1>
<s2>Santa Clara, CA 95054</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s2>221.1-221.9</s2>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>26688</s2>
<s5>354000503609090300</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>60 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0287300</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>The European physical journal. B, Condensed matter physics : (Print)</s0>
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<fA66 i1="01"><s0>FRA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>k-vector conservation is studied in direct bandgap optical transitions by examining edge emitted photoluminescent and electroluminescent spectra. Inhomogeneously and homogeneously broadened spectra are identified in tensile strained, single quantum well, broad stripe laser diode structures. In low excitation conditions, the molecular beam epitaxy (MBE) deposited test structures showed Urbach-tail like inhomogeneous broadening with small Urbach parameter values, typical for high quality materials. At high excitation conditions, significant deviations from Lorentzian line shape were observed and concluded to arise from k-vector conservation within the line broadening process.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H67D</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Bande interdite</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Energy gap</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Profil raie</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Line shape</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Temps relaxation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Relaxation time</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Transition optique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Optical transition</s0>
<s5>05</s5>
</fC03>
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<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Electroluminescence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Electroluminescence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Exciton</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Excitons</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Continuum</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Continuum</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Continuo</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Règle Urbach</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Urbach rule</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Regla Urbach</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Elargissement raie</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Line broadening</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Aluminium Gallium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Aluminium Gallium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Gallium Indium Phosphure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Gallium Indium Phosphides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Puits quantique contraint</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Strained quantum well</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Pozo cuántico forzado</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>48</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>48</s5>
</fC03>
<fN21><s1>273</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Homogeneous broadening and k-vector conservation in direct bandgap transitions: Non-Lorentzian homogeneous line shapes for exponential decays under relaxation time approximation

Homogeneous broadening and k-vector conservation in direct bandgap transitions: Non-Lorentzian homogeneous line shapes for exponential decays under relaxation time approximation

Descripteurs français

English descriptors

Abstract

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